ABSTRACT
In diverse applications
semiconductor materials need to be doped, sometimes to nearly degenerate
levels.eg. In applications such as
thermoelectric, transparent, electronics or power electronics. However many
materials with finite band gaps are not dopable at all, while others exhibit
strong preference toward allowing either p-type or n-type doping, but not both.
In this work, we develop a model of strained band InGaAs/GaAsSb double quantum
quantum well heterostructure on InP using transfer matrice and Model solid
theory. This MATLAB program model was used to obtain the transmission
coefficients, reflectance coefficients, transmission currents and electron/hole
mobility. These were obtained theoretically by employing experimental binary
band parameters obtained from literature.
JOSEPH, J (2022). Flux Transmission Of Strained Band Ingaas/Gaassb Double Quantum Well Nanostructure In InP Substrate (001). Mouau.afribary.org: Retrieved Nov 19, 2024, from https://repository.mouau.edu.ng/work/view/flux-transmission-of-strained-band-ingaasgaassb-double-quantum-well-nanostructure-in-inp-substrate-001-7-2
JOSEPH, JOSEPH. "Flux Transmission Of Strained Band Ingaas/Gaassb Double Quantum Well Nanostructure In InP Substrate (001)" Mouau.afribary.org. Mouau.afribary.org, 11 Oct. 2022, https://repository.mouau.edu.ng/work/view/flux-transmission-of-strained-band-ingaasgaassb-double-quantum-well-nanostructure-in-inp-substrate-001-7-2. Accessed 19 Nov. 2024.
JOSEPH, JOSEPH. "Flux Transmission Of Strained Band Ingaas/Gaassb Double Quantum Well Nanostructure In InP Substrate (001)". Mouau.afribary.org, Mouau.afribary.org, 11 Oct. 2022. Web. 19 Nov. 2024. < https://repository.mouau.edu.ng/work/view/flux-transmission-of-strained-band-ingaasgaassb-double-quantum-well-nanostructure-in-inp-substrate-001-7-2 >.
JOSEPH, JOSEPH. "Flux Transmission Of Strained Band Ingaas/Gaassb Double Quantum Well Nanostructure In InP Substrate (001)" Mouau.afribary.org (2022). Accessed 19 Nov. 2024. https://repository.mouau.edu.ng/work/view/flux-transmission-of-strained-band-ingaasgaassb-double-quantum-well-nanostructure-in-inp-substrate-001-7-2