ABSTRACT

Magnetic oxide thin films of cobalt, nickel, manganese, magnesium were successfully doped with l0% Aluminum (Al) on glass substrates under the deposition condition of 55·C for AMO and AMgO and at room temperature for ACO and ANO using the successive ionic layer adsorption reaction (SILAR) method with NaOH as source of OH. The films were oxidized through annealing to form magnetic oxides at 300°C using the master chef annealing machine and the time for the deposition were varied for l hr, I hr. I 5mins. I hr.30, I hr.45 mins, 2hr. The salt samples of the deposited thin films were obtained from their precipitated salts and dried in air for magnetic susceptibility analysis using magnetic susceptibility weighing balance. The magnetic susceptibility of the ACO, AMO and ANO thin films were paramagnetic, while the thin films of AMgO was dimagnctic in nature. The crystallographic studies were done using X-ray diffractometer, all the films were observed to be polycrystalline in nature. Scanning electron microscope was also used to ascertain the micro structure of the films and the grain size were evenly distributed. Rutherford backscattering spectroscopy analysis confirmed the percentage composition of the elements of aluminum, manganese, cobalt, magnesium, nickel and oxygen in the thin films and the thickness of the film increased with increase in the annealing time. The optical characteristics were carried out using UV-1800 double beam spectrophometer. The films generally show very high transmittance and low absorbance in the visible -infrared region of the electromagnetic spectrum. The four point probe was used to measure the electrical resistivity and conductivity of the thin film with all the films have low resistivity and high conductivity. The band gaps of the films were calculated from absorption coefficient results. From the spectral observations, these films may not be good material for use as solar cell collectors but may be very useful as solar cell collector cover, anti-reflection in smart windows, parasitic capacitance, and composite materials in electrical and electronic devices.